Description
An IR diode and a silicon phototransistor
Place of Origin
Guangdong, China
Description
Phototransistor
Input - Power Dissipation
Pd 75 mW
Output - Collector Power Dissipation
Pd 75 mW
Collector Current
0.5 - 20 mA
Collector - Emitter Voltage
30 V
Emitter - Collector Voltage
5 V
Storage Temperature
-40~+85 ℃
Lead Soldering Temperature
260 ℃
Packaging Details
1000pcs/bag, ESD bag, Carton box