Description
An IR diode and a silicon phototransistor
Model Number
ZL-ITR20001T24
Place of Origin
Guangdong, China
Description
Phototransistor
Input - Power Dissipation
Pd 75 mW
Input - Reverse Current
10 μA
Output - Collector Power Dissipation
Pd 75 mW
Collector Current
600 μA ~ 20 mA
Collector - Emitter Voltage
30 V
Emitter - Collector Voltage
5 V
Lead Soldering Temperature
260 ℃
Lens Color
Water Clear & Black
Packaging Details
1000pcs/bag, ESD bag, Carton box